学位/职称

博士/长鑫存储公司 资深首席工程师

办公室电话

166 0565 9668

Email

Yaner.hu@cxmt.com

教育背景

University of Missouri – Columbia, Ph.D in Nuclear Engineering

研究方向

DRAM BACT / Capacitor Module Development

任职经历

A Top Semi-con R&D Center, Another Top Semi-con , SanDisk, Applied Materials

主持、参与项目

-        New Metal Worldwide DRAM

-        3D NAND Cell Module development

-        NAND cell dielectric

-        Crosspoint RRAM

-        Vertical bitline

-        DRAM Cap Dielectric development

个人获奖

代表性论著

US Patent:

-        Method and apparatus for depositing cobalt

-        Hybrid carbon mask

-        Three dimensional vertical NAND device

-        Vertical floating gate NAND